2N2322 to 2n2326 12/11/2012 comset semiconductors 1 | 3 s s i i l l i i c c o o n n t t h h y y r r i i s s t t o o r r s s all-diffused pnpn thyristors designed for grating operation in ma/ a signal or detection circuits compliance to rohs . maximum ratings (*) t j =125c unless otherwise noted, r gk =1000 ? symbol ratings 2N2322 2n2323 2n2324 2n2325 2n2326 unit v rrm(rep) peak reverse blocking voltage (*) 25 50 100 150 200 v v rsm(non- rep ) non-repetitive peak blocking reverse voltage (t<5.0 ms) 40 75 150 225 300 v i t(rms) forward current rms (all conduction angles) 1.6 a i tsm peak surge current (one-half cycle, 60hz) no repetition until thermal equilibrium is restored. 15 a p gm peak gate power ? forward 0.1 w p g(av) average gate power - forward 0.01 w i gm peak gate current ? forward 0.1 a v gfm peak gate voltage - forward 6.0 v v grm peak gate voltage - reverse 6.0 v t j operating junction temperature range -65 to +125 c t stg storage temperature range -65 to +150 http://www..net/ datasheet pdf - http://www..net/
2N2322 to 2n2326 12/11/2012 comset semiconductors 2 | 3 electrical characteristics (*) t j =25c unless otherwise noted, r gk =1000 ? symbol ratings 2N2322 2n2323 2n2324 2n2325 2n2326 unit v drm peak forward blocking voltage (1) min : 25 50 100 150 200 v i rrm peak reverse blocking current (rated v drm , t j =125c) max : 100 a i drm peak forward blocking current (rated v drm , t j =125c) max : 100 a v tm forward ? on ? voltage i tm =1.0 a peak max : 1.5 v i tm =3.14 a peak t c =85c max : 2.0 i gt gate trigger current (2) anode voltage=6.0 vdc r l =100 ? max : 200 a anode voltage=6.0 vdc r l =100 ? , t c =-65c max : 350 v gt gate trigger voltage anode voltage=6.0 v r l =100 ? max : 0.8 v anode voltage=6.0 v r l =100 ? , t c =-65c max : 1.0 v drm = rated r l =100 ? , t j =125c min : 0.1 i h holding current anode voltage=6.0 v max : 2.0 ma anode voltage=6.0 v t c =-65c max : 3.0 anode voltage=6.0 v t c =125c min : 0.15 (*) jedec registered values (1) v rsm and v drm can be applied for all types on a continuous dc basis without incurring damage. (2) r gk current is not included in measurement. http://www..net/ datasheet pdf - http://www..net/
2N2322 to 2n2326 12/11/2012 comset semiconductors 3 | 3 mechanical data case to-39 revised october 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 8.50 9.39 b 7.74 8.50 c 6.09 6.60 d 0.40 0.53 e - 0.88 f 2.41 2.66 g 4.82 5.33 h 0.71 0.86 j 0.73 1.02 k 12.70 - l 42 48 pin 1 : kathode pin 2 : gate pin 3 : anode case : anode http://www..net/ datasheet pdf - http://www..net/
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